Material: Single Crystal Silicon (CZ / FZ grown)

Diameter Range: 2″ – 12″ (50.8 – 300 mm)

Thickness: 100 – 1000 µm (±10 µm)

Crystal Orientation: (100) / (111) / (110), ±0.5°

Surface Finish: Polished / Lapped / As-cut / Epi-ready

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Product Detail

Shanghai Mac Corporation is a leading Monocrystalline Silicon Wafer manufacturer and supplier.

A monocrystalline silicon wafer is a thin, disc-shaped slice cut from a single crystal silicon ingot grown by the Czochralski (CZ) or Float Zone (FZ) method. It is the fundamental substrate used to build integrated circuits (ICs), discrete power devices, MEMS sensors and photovoltaic solar cells, because its continuous, defect-controlled crystal lattice delivers predictable electrical and mechanical properties that polycrystalline silicon cannot offer. By supplying wafers with precisely controlled diameter, thickness, resistivity, flatness and surface finish, we help chipmakers and module manufacturers cut process variation, raise device yield and lower unit production cost. Our wafers range from 50.8 mm to 300 mm in diameter, in (100), (111) or (110) orientation, P or N type doping, with resistivity from 0.001 to 10,000 Ω·cm, covering both R&D prototyping and high-volume production lines.

If you want to know more about our Monocrystalline Silicon Wafer or product price, please feel free to contact us, we will reply you within 24 hours.

1. Conductivity Type: P type (Boron) / N type (Phosphorus, Arsenic, Antimony)

2. Resistivity Range: 0.001 – 10,000 Ω·cm

3. Total Thickness Variation (TTV): ≤ 2 – 10 µm (diameter dependent)

4. Bow / Warp: ≤ 40 – 60 µm

5. Surface Roughness (polished): < 0.15 nm RMS

6. Grade: Prime / Test / Dummy / Monitor

7. Standard: SEMI M1, SEMI M59, SEMI PV22

1. Precise Crystal Orientation Control Wafers are grown and sliced to (100), (111) or (110) with ±0.5° tolerance, giving you a consistent, predictable base for epitaxy and lithography and reducing alignment-related process errors.
2. Tight Dimensional Tolerance Diameter and thickness are held to ±0.2–0.3 mm and ±10 µm with TTV ≤ 2–10 µm, so wafers seat uniformly in automated handling equipment, improving mechanical stability and line yield.
3. Controlled Resistivity & Doping P type (boron) and N type (phosphorus, arsenic, antimony) doping with resistivity from 0.001 to 10,000Ω·cm lets you match the exact electrical specification of your device, from power electronics to RF circuits.
4. Ultra-flat Polished Surface Mirror-polished front side with roughness below 0.15 nm RMS and low bow/warp (≤ 40–60 µm) keeps photolithography in focus and film deposition clean, boosting pattern fidelity and device performance.
5. Low Defect Density CZ and FZ ingots with controlled oxygen, carbon and micro-defects reduce crystal-originated particles, improving device reliability and lifetime in demanding applications. 6. Full Surface Finish Options Polished, lapped, as-cut and epi-ready surfaces are available from one supply chain, so you can source the right wafer type and grade for R&D, prototyping and mass production without switching suppliers.

1. Photovoltaic New‑Energy Sector (Largest‑scale Application) As the core of solar cells, monocrystalline silicon wafers are widely used in ground‑mounted power stations, residential rooftop PV, BIPV, solar street‑lights, agro‑voltaic greenhouses and spacecraft solar panels. Under the global carbon‑neutrality drive, they deliver clean power to reduce carbon emissions and ease the energy crisis.
2. Semiconductor Chip Sector (High‑end Sophisticated Application) High‑purity semiconductor‑grade monocrystalline silicon wafers are the base substrate for integrated circuits and chips. They underpin processors, memory chips, automotive‑grade, 5G, AI and industrial control chips for consumer electronics, new‑energy vehicles and digital infrastructure.
3. High‑end Power Devices Monocrystalline‑silicon‑based IGBTs, MOSFETs, diodes and triodes are deployed in new‑energy vehicles, high‑speed railways, industrial inverters and smart grids for accurate current control and reliable equipment performance.
4. Aerospace & Precision Instruments With excellent heat‑resistance, radiation resistance and stable properties, monocrystalline silicon wafers are applied in satellite control systems, infrared optical parts and high‑precision sensors to support space exploration and advanced research.

Crystal & Electrical Parameters

1. Parameter SGrowth Method: CZ (Czochralski) / MCZ / FZ (Float Zone)

2. Oxygen Content (CZ): 10 – 18 ppma

3. Carbon Content: ≤ 1 ppma

4. Dopant Concentration: Per customer specification

Wafer Manufacturing Process

Polysilicon feedstock → Crystal growth (CZ / FZ) → Ingot grinding & orientation → Wire saw slicing → Edge rounding → Lapping / grinding → Wet etching → Mirror polishing → Precision cleaning → Optical inspection & packaging.

manufacturing process

Standard Packaging

Each wafer is sealed in a nitrogen-protected vacuum aluminum foil bag with anti-static protection, then placed individually into a clean plastic wafer cassette or rigid wafer shipping box. Cassettes are packed in reinforced export cartons together with moisture-absorbing desiccant and ESD warning labels, and the cartons are stacked on fumigated wooden pallets wrapped with stretch film for international shipment.

Shipping

We support FCL and LCL sea freight, air freight and express delivery depending on order quantity and destination. Common trade terms include EXW / FCA / FOB / CFR / CIF; other terms may be available upon request.

Shipping costs are calculated based on cargo volume, gross weight, destination and selected transportation method. Packing list, commercial invoice and certificate of origin can be provided with each shipment.

Lead time

Samples: 3 – 7 working days

Standard orders: 15 – 25 working days

Customized orders: 25 – 40 working days

packing packing

Q: How long does sample preparation take?

A: Standard samples are ready within 3–7 working days after specification confirmation, and are shipped by express together with the full inspection report (resistivity, TTV, bow/warp and surface particles).

Q: What information do you need for a custom quotation?

A: Please provide diameter, thickness, crystal orientation, conductivity type (P/N), resistivity range, surface finish, grade (prime/test/dummy) and quantity. We will respond with a quotation within 24 hours.

Q: What is the MOQ and production lead time?

A: The MOQ is 25 wafers for standard polished wafers. Standard orders ship in 15–25 working days and customized orders in 25–40 working days, depending on size and grade.

Q: What quality standards does the product meet?

A: Wafers are produced and inspected according to SEMI M1 and SEMI M59 (and SEMI PV22 for solar grade), with a certificate of analysis covering electrical, dimensional and surface parameters for each batch.

Q: What is the difference between CZ and FZ silicon wafers?

A: CZ (Czochralski) wafers are grown from a melt in a quartz crucible, offering large diameters (up to 300 mm) at lower cost but with higher oxygen content. FZ (Float Zone) wafers are grown without a crucible, giving much lower oxygen content and higher resistivity — preferred for high-voltage power devices such as IGBT.

Q: What is the difference between polished, lapped and as-cut wafers?

A: As-cut wafers come directly from wire sawing and still carry saw marks; lapped wafers have a flat, uniformly ground surface; polished wafers have a mirror-smooth, particle-free front side ready for epitaxy and lithography. As-cut suits solar cells, while polished suits IC and MEMS fabrication.

Q: How do I choose the right wafer orientation for my device?

A: (100) is dominant for CMOS logic and memory because it cleaves easily and gives good gate oxide quality; (111) is used for bipolar and power devices; (110) is used for special MEMS structures. Tell us your device type and we will recommend the best orientation.

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Monocrystalline Silicon Wafer

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